The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

May. 25, 2012
Applicants:

Pietro Montanini, Milan, IT;

Giovanna Germani, Bareggio, IT;

Ilaria Gelmi, Albiate, IT;

Marta Mottura, Milan, IT;

Inventors:

Pietro Montanini, Milan, IT;

Giovanna Germani, Bareggio, IT;

Ilaria Gelmi, Albiate, IT;

Marta Mottura, Milan, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.


Find Patent Forward Citations

Loading…