The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8486738 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 16, 2013

Filed:

Jun. 01, 2011
Applicants:

Shiuh Chao, Hsinchu, TW;

Hao-min Ku, Hsinchu, TW;

Chen-yang Huang, Hsinchu, TW;

Inventors:

Shiuh Chao, Hsinchu, TW;

Hao-Min Ku, Hsinchu, TW;

Chen-Yang Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented.


Find Patent Forward Citations

Chao, Shiuh. (2013). Light emitting device having auto-cloning photonic crystal structures and manufacturing method thereof (U.S. Patent No. 8486738). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8486738

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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