The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Dec. 11, 2009
Sang-ouk Kim, Daejeon, KR;
Seong-jun Jeong, Daejeon, KR;
Su-mi Lee, Yongin-si, KR;
Bong-hoon Kim, Daejeon, KR;
Ji-eun Kim, Daejeon, KR;
Jae-ho You, Kwaseong-si, KR;
Moon-gyu Lee, Suwon-si, KR;
Seung-ho Nam, Seongnam-si, KR;
Sang-Ouk Kim, Daejeon, KR;
Seong-Jun Jeong, Daejeon, KR;
Su-Mi Lee, Yongin-si, KR;
Bong-Hoon Kim, Daejeon, KR;
Ji-Eun Kim, Daejeon, KR;
Jae-Ho You, Kwaseong-si, KR;
Moon-Gyu Lee, Suwon-si, KR;
Seung-Ho Nam, Seongnam-si, KR;
Abstract
According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.