The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Aug. 20, 2009
Ronghui Zhou, Fremont, CA (US);
Ming Jiang, San Jose, CA (US);
Xiaohai Xiang, Danville, CA (US);
Jinwen Wang, Fremont, CA (US);
Guanghong Luo, Fremont, CA (US);
Yun-fei LI, Fremont, CA (US);
Ronghui Zhou, Fremont, CA (US);
Ming Jiang, San Jose, CA (US);
Xiaohai Xiang, Danville, CA (US);
Jinwen Wang, Fremont, CA (US);
Guanghong Luo, Fremont, CA (US);
Yun-Fei Li, Fremont, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.