The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Sep. 01, 2008
Robert Andrew Bardos, North Bondi, AU;
Thorsten Trupke, Coogee, AU;
Robert Andrew Bardos, North Bondi, AU;
Thorsten Trupke, Coogee, AU;
BT Imaging Pty Ltd, Sydney, AU;
Abstract
Disclosed is a method () of manufacturing at least one semiconductor photovoltaic cell or module and for classifying semiconductor material. In one implementation () the method involves luminescence imaging a wafer at each of a plurality of stages (-) of the manufacturing process, and comparing at least two images obtained from the imaging step in respect of the same wafer to identify the incidence or growth of a manufacturing process induced fault. The wafer is removed (-) from the manufacturing process () where a process induced fault is identified that exceeds a predetermined level of acceptability or the fault may be remedied, or the wafer passed to an alternate manufacturing process to match its characteristics. In an alternate implementation the method comprises classifying semiconductor material. For example, providing at least two wafers, obtaining luminescence images of each wafer comparing the images to determine the electrical structure similarity of the wafers, and grouping wafers with a predetermined level of electrical structure similarity into the same family. The inventive method is suitable for determining various forms of mechanical, electrical and cosmetic irregularities.