The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jan. 20, 2010
Takanori Watanabe, Yamato, JP;
Mineo Shimotsusa, Machida, JP;
Takeshi Ichikawa, Hachioji, JP;
Hajime Ikeda, Yokohama, JP;
Yasuhiro Sekine, Yokohama, JP;
Akira Ohtani, Ebina, JP;
Takeshi Kojima, Kawasaki, JP;
Takanori Watanabe, Yamato, JP;
Mineo Shimotsusa, Machida, JP;
Takeshi Ichikawa, Hachioji, JP;
Hajime Ikeda, Yokohama, JP;
Yasuhiro Sekine, Yokohama, JP;
Akira Ohtani, Ebina, JP;
Takeshi Kojima, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.