The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Sep. 24, 2010
Hong Liang Zhang, Singapore, SG;
Hong Liang Zhang, Singapore, SG;
Marvell International Ltd., Hamilton, BM;
Abstract
In a current switch, a bias generation circuit electrically connected to a high voltage power supply generates a bias current. The bias current is mirrored by a current mirror containing a first plurality of transistors to a first one of a second plurality of transistors. The first one of the second plurality of transistors amplifies the mirrored bias current and transmits the amplified bias current to a second one of the second plurality of transistors. The second one of the second plurality of transistors sinks the amplified bias current into a node shared by an internal reference voltage, thereby putting the node in a first logic state. A third one of the second plurality of transistors receives the amplified bias current from the second one of the second plurality of transistors and sinks the amplified bias current into a node shared by a gate of a high voltage p-type transistor, thereby putting the node in the first logic state. Putting both nodes in the first logic state turns off the high voltage transistor.