The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Dec. 09, 2010
Hsun-chih Liu, Taipei County, TW;
Chen-zi Liao, Nantou County, TW;
Yen-hsiang Fang, Taipei County, TW;
Rong Xuan, Taipei County, TW;
Chu-li Chao, Hsinchu, TW;
Hsun-Chih Liu, Taipei County, TW;
Chen-Zi Liao, Nantou County, TW;
Yen-Hsiang Fang, Taipei County, TW;
Rong Xuan, Taipei County, TW;
Chu-Li Chao, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.