The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Feb. 27, 2008
Matobu Kikuchi, Tokyo, JP;
Yasuo Nakajima, Tokyo, JP;
Yoshiyuki Nakashima, Hyogo, JP;
Hitoshi Sakuma, Tokyo, JP;
Matobu Kikuchi, Tokyo, JP;
Yasuo Nakajima, Tokyo, JP;
Yoshiyuki Nakashima, Hyogo, JP;
Hitoshi Sakuma, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor photodetector includes: forming an insulating film on a semiconductor substrate; forming an electrode on and in contact with a predetermined area of a surface of the semiconductor substrate; forming a resist on the insulating film after forming the electrode; forming a power supply layer of a metal on the resist and the electrode; plating a surface of a portion of the power supply layer with a metal coating, after forming the power supply layer, the portion overlying and being in contact with the electrode; after the plating, etching and removing a part of the power supply layer leaving a portion that is covered with the metal coating and is an extension of the electrode; and removing the resist after etching the power supply layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile