The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Nov. 04, 2011
Joon Sung Lee, Daejeon, KR;
Yong Sun Yoon, Daejeon, KR;
Joon Sung Lee, Daejeon, KR;
Yong Sun Yoon, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.