The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Nov. 30, 2010
Mitsuo Tanaka, Fukui, JP;
Mitsuo Tanaka, Fukui, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A high-performance semiconductor apparatus which can be easily introduced into the MOS process, reduces the leakage current (electric field strength) between the emitter and the base, and is insusceptible to noise or surge voltage, and a manufacturing method of the semiconductor apparatus. The emitteris formed by performing the ion implantation twice by using the conductive film () as a mask. The second emitter area () is formed by ion implantation of a low impurity density impurity ion, and the first emitter area () is formed by ion implantation of a high impurity density impurity ion. As a result, the low impurity density second emitter area is formed in the circumference of the emitter, which lowers the electric field strength, and reduces the leakage current. Also the conductive film is connected with the emitter electrode (), which makes the apparatus insusceptible to noise.