The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
May. 06, 2011
Jongho Lee, Hwaseong-si, KR;
Chang-bong OH, Seongnam-si, KR;
Ho Lee, Cheonan-si, KR;
Myungsun Kim, Hwaseong-si, KR;
Jongho Lee, Hwaseong-si, KR;
Chang-Bong Oh, Seongnam-si, KR;
Ho Lee, Cheonan-si, KR;
Myungsun Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate including a first region and a second region each having an n-type region and a p-type region, wherein the n-type region in the first region includes a silicon channel, the p-type region in the first region includes a silicon germanium channel, and the n-type region and the p-type region in the second region respectively include a silicon channel. A first gate insulating pattern formed of a thermal oxide layer is disposed on the substrate of the n-type and p-type regions in the second region.