The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Nov. 25, 2008
Zachary K. Lee, Lake Forest, CA (US);
Zachary K. Lee, Lake Forest, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
According to an exemplary embodiment, a MOS transistor, such as an LDMOS transistor, includes a gate having a first side situated immediately adjacent to at least one source region and at least one body tie region. The MOS transistor further includes a drain region spaced apart from a second side of the gate. The MOS transistor further includes a body region in contact with the at least one body tie region, where the at least one body tie region is electrically connected to the at least one source region. The MOS transistor further includes a lightly doped region separating the drain region from the second side of the gate. The lightly doped region can isolate the body region from an underlying substrate.