The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jun. 11, 2012
Yangbo Yi, Suzhou, CN;
Haisong LI, Suzhou, CN;
Qin Wang, Suzhou, CN;
Ping Tao, Suzhou, CN;
Lixin Zhang, Suzhou, CN;
Yangbo Yi, Suzhou, CN;
Haisong Li, Suzhou, CN;
Qin Wang, Suzhou, CN;
Ping Tao, Suzhou, CN;
Lixin Zhang, Suzhou, CN;
Suzhou Poweron IC Design Co., Ltd., Dushu Lake, Suzhou Industrial Park, Jiangsu Province, CN;
Abstract
A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.