The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Oct. 19, 2007
Mieko Matsumura, Kokubunji, JP;
Yoshiaki Toyota, Hachioji, JP;
Takeshi Sato, Kokubunji, JP;
Mutsuko Hatano, Kokubunji, JP;
Mieko Matsumura, Kokubunji, JP;
Yoshiaki Toyota, Hachioji, JP;
Takeshi Sato, Kokubunji, JP;
Mutsuko Hatano, Kokubunji, JP;
Hitachi Displays, Ltd., Chiba-Ken, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo-Ken, JP;
Abstract
An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.