The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Aug. 23, 2010
Hiroaki Ohta, Goleta, CA (US);
Feng Wu, Goleta, CA (US);
Anurag Tyagi, Goleta, CA (US);
Arpan Chakraborty, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Erin C. Young, Santa Barbara, CA (US);
Hiroaki Ohta, Goleta, CA (US);
Feng Wu, Goleta, CA (US);
Anurag Tyagi, Goleta, CA (US);
Arpan Chakraborty, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Erin C. Young, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.