The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Feb. 29, 2012
Marc Christophersen, Berwyn Heights, MD (US);
Bernard F. Phlips, Great Falls, VA (US);
Marc Christophersen, Berwyn Heights, MD (US);
Bernard F. Phlips, Great Falls, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an 'inter-segment isolation' to separate the n-type strips from each other; an alumina layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface with appropriate densities. When alumina dielectric is deposited on silicon, the negative interface charge acts like an effective p-stop or p-spray barrier because electrons are 'pushed' away from the interface due to the negative interface charge.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile