The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jul. 08, 2008
Hironobu Miya, Toyama, JP;
Eisuke Nishitani, Toyama, JP;
Yuji Takebayashi, Toyama, JP;
Masanori Sakai, Takaoka, JP;
Hirohisa Yamazaki, Toyama, JP;
Toshinori Shibata, Tokyo, JP;
Minoru Inoue, Tokyo, JP;
Hironobu Miya, Toyama, JP;
Eisuke Nishitani, Toyama, JP;
Yuji Takebayashi, Toyama, JP;
Masanori Sakai, Takaoka, JP;
Hirohisa Yamazaki, Toyama, JP;
Toshinori Shibata, Tokyo, JP;
Minoru Inoue, Tokyo, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.