The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jan. 10, 2012
Applicants:
Jae Heon Kim, Seoul, KR;
Cheol Kyu Bok, Icheon-si, KR;
Inventors:
Jae Heon Kim, Seoul, KR;
Cheol Kyu Bok, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device is provided. According to an embodiment, the method includes forming a layer to be etched on a semiconductor substrate, and forming a photoresist pattern on the layer to be etched. A block copolymer including a hydrophobic radical and a hydrophilic radical is formed in the photoresist pattern, and the block copolymer is assembled to allow a polymer having the hydrophobic radical to be formed in a pillar pattern within a polymer having the hydrophilic radical. The polymer having the hydrophobic radical is then selectively removed.