The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Feb. 17, 2011
Applicants:
Jung-in Kim, Namhyeon-dong, KR;
Jaehee OH, Hwasung, KR;
Kiseok Suh, Hwasung, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/461 (2006.01); H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a pattern structure and a method of fabricating a semiconductor device using the pattern structure, are provided the method of forming the pattern structure includes forming a mask on an underlying layer formed on a lower layer. The underlying layer is etched using the mask as an etching mask, thereby forming patterns on the lower layer. The patterns define at least one opening. A sacrificial layer is formed in the opening and the mask is removed. The sacrificial layer in the opening is partially etched when the mask is removed.