The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Dec. 30, 2011
Applicant:
Bruce Faure, Paris, FR;
Inventor:
Bruce Faure, Paris, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a process for fabricating a heterostructure. This process comprises heating an intermediate heterostructure. The intermediate heterostructure comprises a crystalline strain relaxation layer interposed directly between a first substrate and a strained layer of crystalline semiconductor material. The process further comprises causing plastic deformation of the crystalline strain relaxation layer and elastic deformation of the strained layer of crystalline semiconductor material to at least partially relax the strained layer of crystalline semiconductor material.