The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Mar. 12, 2010
Seung-sik Chung, Seoul, KR;
Jung-hee Chung, Suwon-si, KR;
Young-jin Kim, Yongin-si, KR;
Seok-woo Nam, Seongnam-si, KR;
Han-jin Lim, Seoul, KR;
Kyoung-ryul Yoon, Goyang-si, KR;
Seung-Sik Chung, Seoul, KR;
Jung-Hee Chung, Suwon-si, KR;
Young-Jin Kim, Yongin-si, KR;
Seok-Woo Nam, Seongnam-si, KR;
Han-Jin Lim, Seoul, KR;
Kyoung-Ryul Yoon, Goyang-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si Gyeonggi-do, KR;
Abstract
A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer.