The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Oct. 24, 2011
Alexandre Mondot, Grenoble, FR;
Markus Gerhard Andreas Muller, Grenoble, FR;
Thomas Kormann, Grenoble, FR;
Alexandre Mondot, Grenoble, FR;
Markus Gerhard Andreas Muller, Grenoble, FR;
Thomas Kormann, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS, Crolles Cedex, FR;
NXP B.V., Eindhoven, NL;
Abstract
A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake at a temperature lower or equal to 800° C., a subsequent deposition step will prevent deposition in the first surface region. This allows selective deposition in the second surface region, which is not doped with the Boron (or doped with another dopant or not doped). Several devices are, thus, provided. The method saves a usual photolithography sequence, which according to prior art is required for selective deposition of Si or SiGe in the second surface region.