The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Dec. 04, 2009
Applicant:
Kenshi Tada, Osaka, JP;
Inventor:
Kenshi Tada, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing a semiconductor device includes a step of forming a first insulation film, a step of forming a separation layer in a base layer, a step of forming a light-blocking film on the surface of the first insulation film, a step of forming a second insulation film such that the light-blocking film is covered, a step of affixing the base layer provided with the light-blocking film to a substrate, a step of separating and removing along the separation layer a portion of the base layer affixed to the substrate, and a step of forming a semiconductor layer such that at least a portion thereof overlaps with the light-blocking film.