The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Dec. 17, 2010
IN Sic Moon, Seongnam-si, KR;
Eun Chel Cho, Yongin-si, KR;
Won Jae Lee, Seongnam-si, KR;
Jong Keun Lim, Yongin-si, KR;
In Sic Moon, Seongnam-si, KR;
Eun Chel Cho, Yongin-si, KR;
Won Jae Lee, Seongnam-si, KR;
Jong Keun Lim, Yongin-si, KR;
Abstract
A method for manufacturing a back contact solar cell according to the present invention comprises the following steps: preparing a p-type silicon substrate having a via hole; performing a diffusion process to form an emitter layer all over the surface of the substrate; forming an etching mask on the front surface and back surface of the substrate so as to selectively expose a portion of the substrate; etching a portion of the thickness of the substrate in the region exposed to the etching mask so as to remove an emitter layer in the relevant region; forming an anti-reflection film on the front surface of the substrate; and forming a grid electrode on the front surface of the substrate, and forming an n-electrode and a p-electrode on the back surface of the substrate.
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