The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Jan. 20, 2010
Applicants:
Tomoyuki Sasaki, Tokyo, JP;
Tohru Oikawa, Tokyo, JP;
Katsumichi Tagami, Saku, JP;
Inventors:
Assignee:
TDK Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer.