The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Sep. 09, 2012
Zhichen Zhang, Beijing, CN;
Chuanzheng Wang, Beijing, CN;
Zhichen Zhang, Beijing, CN;
Chuanzheng Wang, Beijing, CN;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of designing an integrated circuit (IC) includes simulating aging evolution of the IC by providing a standard cells library, and a device activity file of device electrical activity in the standard cells as a function of electrical activity at the pins of the standard cells, taking into account Hot Carrier Injection, Negative Bias Temperature Instability, and gate oxide breakdown. A standard cell evolution file is provided that stores electrical characteristic aging data of standard cells. An instance activity file is provided of simulated electrical activity at the pins of individual instances of the cells in the IC. The instance activity file and the device activity file are used to analyze device activity and consequent aging evolution of the devices, and then generate data for consequent aging evolution of the IC. The IC design can then be modified to account for the aging evolution.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile