The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Mar. 27, 2012
Tetsuya Kumano, Itami, JP;
Masaki Ueno, Itami, JP;
Takashi Kyono, Itami, JP;
Yohei Enya, Itami, JP;
Katsunori Yanashima, Kanagawa, JP;
Kunihiko Tasai, Tokyo, JP;
Hiroshi Nakajima, Kanagawa, JP;
Tetsuya Kumano, Itami, JP;
Masaki Ueno, Itami, JP;
Takashi Kyono, Itami, JP;
Yohei Enya, Itami, JP;
Katsunori Yanashima, Kanagawa, JP;
Kunihiko Tasai, Tokyo, JP;
Hiroshi Nakajima, Kanagawa, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Sony Corporation, Minato-ku, Tokyo, JP;
Abstract
A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.