The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Nov. 03, 2011
Applicants:

Samuel S. Mao, Castro Valley, CA (US);

Yanfeng Zhang, Mountain View, CA (US);

Inventors:

Samuel S. Mao, Castro Valley, CA (US);

Yanfeng Zhang, Mountain View, CA (US);

Assignee:

U.S. Department of Energy, Washington, DC (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.


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