The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Jan. 19, 2011
Applicants:

Susumu Obata, Yokohama, JP;

Takahiro Sogou, Yokohama, JP;

Yusaku Asano, Yokohama, JP;

Takeshi Miyagi, Fujisawa, JP;

Inventors:

Susumu Obata, Yokohama, JP;

Takahiro Sogou, Yokohama, JP;

Yusaku Asano, Yokohama, JP;

Takeshi Miyagi, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/31 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor device includes: a substrate; an organic insulating film provided on the substrate; an inorganic insulating film formed thinner than the organic insulating film on the organic insulating film; a hollow sealing structure that is formed on the inorganic insulating film, and seals a MEMS element in an inside while ensuring a space between the hollow sealing structure itself and the MEMS element; a through hole formed so as to penetrate the organic insulating film and the inorganic insulating film; and a conductive member that is filled into the through hole, and electrically connects the MEMS element and an electrode formed by being filled into the through hole.


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