The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Nov. 30, 2010
Honggun Kim, Gyeonggi-do, KR;
Yongsoon Choi, Yongin-si, KR;
Ha-young Yi, Seongnam-si, KR;
Eunkee Hong, Sungnam-Shi, KR;
Honggun Kim, Gyeonggi-do, KR;
YongSoon Choi, Yongin-si, KR;
Ha-Young Yi, Seongnam-si, KR;
Eunkee Hong, Sungnam-Shi, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device and a method of fabricating thereof, including preparing a substrate including a first and second region; forming first and second conductive lines on the first and second region, respectively, the first conductive lines being spaced apart at a first interval and the second conductive lines being spaced apart at a second interval wider than the first interval; forming a dielectric layer in spaces between the first and second conductive lines; etching the dielectric layer until a top surface thereof is lower than top surfaces of the first conductive lines and the second conductive lines; forming a spacer on the etched dielectric layer such that the spacer covers an entire top surface of the etched dielectric layer between the first conductive lines and exposes portions of the etched dielectric layer between the second conductive lines; and removing portions of the etched dielectric layer between the second conductive lines.