The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Feb. 12, 2010
Young-mok Kim, Suwon-si, KR;
Sun-hak Lee, Anyang-si, KR;
Tae-cheol Lee, Yongin-si, KR;
Yong-sang Jeong, Suwon-si, KR;
Young-Mok Kim, Suwon-si, KR;
Sun-Hak Lee, Anyang-si, KR;
Tae-Cheol Lee, Yongin-si, KR;
Yong-Sang Jeong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.