The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8476690 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 02, 2013

Filed:

Sep. 01, 2011
Applicants:

Daisuke Hagishima, Kawasaki, JP;

Atsuhiro Kinoshita, Kamakura, JP;

Inventors:

Daisuke Hagishima, Kawasaki, JP;

Atsuhiro Kinoshita, Kamakura, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile programmable logic switch according to an embodiment includes: a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type; a memory cell transistor including a first insulating film formed on the first semiconductor region, a charge storage film formed on the first insulating film, a second insulating film formed on the charge storage film, and a control gate formed on the second insulating film; a pass transistor including a third insulating film formed on the second semiconductor region, and a gate electrode formed on the third insulating film and electrically connected to the first drain region; a first electrode applying a substrate bias to the first semiconductor region, the first electrode being formed in the first semiconductor region; and a second electrode applying a substrate bias to the second semiconductor region, the second electrode being formed in the second semiconductor region.


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