The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Sep. 29, 2010
Edward John Coyne, Limerick, IE;
Paul Malachy Daly, Limerick, IE;
Jagar Singh, Limerick, IE;
Seamus Whiston, Limerick, IE;
Patrick Martin Mcguinness, Limerick, IE;
William Allan Lane, Cork, IE;
Edward John Coyne, Limerick, IE;
Paul Malachy Daly, Limerick, IE;
Jagar Singh, Limerick, IE;
Seamus Whiston, Limerick, IE;
Patrick Martin McGuinness, Limerick, IE;
William Allan Lane, Cork, IE;
Analog Devices, Inc., Norwood, MA (US);
Abstract
Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the drain and source being separated from one another, wherein the drain comprises a first drain region of a first dopant concentration adjacent a second drain region, such that at least a portion of the second drain region is positioned between the first drain region and the source, and further comprising forming an intermediate region by doping the semiconductor so as to form a second type of semiconductor intermediate the drain and source, the intermediate region spaced apart from the second drain region.