The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Feb. 26, 2009
Philippe Meunier-beillard, Kortenberg, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Erwin Hijzen, Haasrode, BE;
Philippe Meunier-Beillard, Kortenberg, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Erwin Hijzen, Haasrode, BE;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device () comprising a bipolar transistor and a fieldeffect transistor within a semiconductor body () comprising a projecting mesa () within which are at least a portion of a collector region (and) and a base region () of the bipolar transistor. The bipolar transistor is provided with an insulating cavity () provided in the collector region (and). The insulating cavity () may be provided by providing a layer () in the collector region (), creating an access path, for example by selectively etching polysilicon towards monocrystalline, and removing a portion of the layer () to provide the cavity using the access path. The layer () provided in the collector region may be of SiGe:C. By blocking diffusion from the base region the insulating cavity () provides a reduction in the base collector capacitance and can be described as defining the base contact.