The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
May. 06, 2011
Ray-hua Horng, Taipei, TW;
Yi-an LU, Taipei, TW;
Ray-Hua Horng, Taipei, TW;
Yi-An Lu, Taipei, TW;
Phostek, Inc., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.