The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Dec. 12, 2011
Applicants:

Jong IN Yang, Gyunggi-do, KR;

Sang Bum Lee, Gyunggi-do, KR;

Sang Yeob Song, Gyunggi-do, KR;

SI Hyuk Lee, Gyunggi-do, KR;

Tae Hyung Kim, Gyunggi-do, KR;

Inventors:

Jong In Yang, Gyunggi-do, KR;

Sang Bum Lee, Gyunggi-do, KR;

Sang Yeob Song, Gyunggi-do, KR;

Si Hyuk Lee, Gyunggi-do, KR;

Tae Hyung Kim, Gyunggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.


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