The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Sep. 16, 2009
Applicants:

Hyeong-suk Yoo, Yongin-si, KR;

Ho-jun Lee, Anyang-si, KR;

Sung-ryul Kim, Cheonan-si, KR;

O-sung Seo, Seoul, KR;

Hong-kee Chin, Suwon-si, KR;

Inventors:

Hyeong-Suk Yoo, Yongin-si, KR;

Ho-Jun Lee, Anyang-si, KR;

Sung-ryul Kim, Cheonan-si, KR;

O-Sung Seo, Seoul, KR;

Hong-Kee Chin, Suwon-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate comprising a three mask process. The 3 mask process comprising, forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming a first, second, and third passivation film successively on the substrate. Over the above multi-layers of the passivation film forming a first photoresist pattern comprising a first portion formed on part of the drain electrode and on the pixel region, and a second portion wherein, the second portion thicker than the first portion, and then patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern; and forming a transparent electrode pattern on the second passivation layer.


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