The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Apr. 11, 2011
Ki-hong Kim, Yongin, KR;
Jeong-hwan Kim, Yongin, KR;
Yong-jae Jang, Yongin, KR;
Jung-hyun Kim, Yongin, KR;
Ki-Hong Kim, Yongin, KR;
Jeong-Hwan Kim, Yongin, KR;
Yong-Jae Jang, Yongin, KR;
Jung-Hyun Kim, Yongin, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low 'off' current and a sufficiently high 'on' current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.