The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Apr. 23, 2010
Applicants:

Jae Sung Lee, Seoul, KR;

Mikiko Ito, Seoul, KR;

Seong Jong Hong, Seoul, KR;

Inventors:

Jae Sung Lee, Seoul, KR;

Mikiko Ito, Seoul, KR;

Seong Jong Hong, Seoul, KR;

Assignee:

Snu R&DB Foundation, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an apparatus for measuring a Depth-Of-Interaction (DOI), comprising a crystal layerof a mono layer in which a plurality of crystals for absorbing gamma rays are consecutively arranged, scintillation light detectors disposed at one end of the crystals and configured to detect scintillation light emitted from the crystal layerby the gamma rays, change means included in the crystals and configured to linearly change transmittance in a length direction of the crystals, and a control unitconfigured to calculate the DOI in the crystal layeron a basis of the first output signal and the second output signal. The scintillation light detector outputs the first output signal in one direction and the second output signal in a direction at a right angle to the one direction.


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