The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jan. 12, 2012
Tomoyuki Tezuka, Sagamihara, JP;
Mahito Shinohara, Tokyo, JP;
Yasuhiro Kawabata, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device that includes a semiconductor substrate is provided. The method includes: exposing a photoresist coated on the semiconductor substrate using a photomask including a plurality of regions having different light transmittances; developing the photoresist to form a resist pattern including a plurality of regions having different thicknesses that depend on an exposure amount of the photoresist; and implanting impurity ions into the semiconductor substrate through the plurality of regions of the resist pattern having different thicknesses to form a plurality of impurity regions whose depths from a surface of the semiconductor substrate to peak positions are different from each other. The depths to the peak positions depend on the thickness of the resist pattern through which the implanted impurity ions pass.