The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Sep. 13, 2012
Huilong Zhu, Poughkeepsie, NY (US);
Jing Wang, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Jing Wang, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure which exhibits high device performance and improved short channel effects is provided. In particular, a metal oxide semiconductor field effect transistor (MOFET) is provided that includes a low dopant concentration within an inversion layer of the structure; the inversion layer is an epitaxial semiconductor layer that is formed atop a portion of the semiconductor substrate. The structure also includes a well region of a first conductivity type beneath the inversion layer, wherein the well region has a central portion and two horizontally abutting end portions. The central portion has a higher concentration of a first conductivity type dopant than the two horizontally abutting end portions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile