The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
May. 19, 2011
Takayuki Shimatou, Nagano, JP;
Takayuki Shimatou, Nagano, JP;
Fuji Electric Co., Ltd., Kawasaki, JP;
Abstract
A method of manufacturing a super-junction semiconductor device includes growing an alternating conductivity type layer epitaxially on a heavily doped n-type semiconductor substrate, the alternating conductivity type layer including n-type and p-type semiconductor regions arranged alternately and repeated such that n-type and p-type regions are adjoining each other, and arranged to extend perpendicular to the substrate's major surface. The method includes forming a first trench having a predetermined depth in the surface portion of n-type semiconductor region; forming an n-type thin layer on the inner surface of the first trench; and burying gate electrode in the space surrounded by the n-type thin layer with a gate insulator film interposed between a gate electrode and the n-type thin layer.