The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Jul. 12, 2011
Applicants:

Tea-kwang Yu, Hwaseong-si, KR;

Byung-sup Shim, Yongin-si, KR;

Yong-kyu Lee, Gwacheon-si, KR;

Bo-young Seo, Suwon-si, KR;

Yong-tae Kim, Yongin-si, KR;

Inventors:

Tea-Kwang Yu, Hwaseong-si, KR;

Byung-Sup Shim, Yongin-si, KR;

Yong-Kyu Lee, Gwacheon-si, KR;

Bo-Young Seo, Suwon-si, KR;

Yong-Tae Kim, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.


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