The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jul. 05, 2011
Junji OH, Yokohama, JP;
Junji Oh, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
The method of manufacturing the semiconductor device includes amorphizing a first region and a second region of a semiconductor substrate by an ion implantation, implanting a first impurity and a second impurity respectively in the first region and the second region, activating the implanted impurities to form a first impurity layer and a second impurity layer, epitaxially growing a semiconductor layer above the semiconductor substrate with the impurity layers formed on, growing a gate insulating film above the first region and the second region, and forming a first gate electrode above the gate insulating film in the first region and the second gate electrode above the gate insulating film in the second region.