The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Aug. 05, 2009
Jeremy Burroughes, Cambridge, GB;
Julian Carter, Dry Drayton, GB;
Euan Smith, Longstanton, GB;
Jonathan Halls, Cambridge, GB;
Thomas Kugler, Cambridge, GB;
Christopher Newsome, St. Ives, GB;
Jeremy Burroughes, Cambridge, GB;
Julian Carter, Dry Drayton, GB;
Euan Smith, Longstanton, GB;
Jonathan Halls, Cambridge, GB;
Thomas Kugler, Cambridge, GB;
Christopher Newsome, St. Ives, GB;
Cambridge Display Technology Limited, Cambridgeshire, GB;
Abstract
The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.