The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Mar. 13, 2009
Applicant:
Sung-soo Park, Seongnam-si, KR;
Inventor:
Sung-Soo Park, Seongnam-si, KR;
Assignee:
Samsung Corning Precision Materials Co., Ltd., Gyeongsangbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A wafer structure and epitaxial growth method for growing the same. The method may include forming a mask layer having nano-sized areas on a wafer, forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer, and forming an epitaxial material layer on the porous layer using an epitaxial growth process.
Quick Actions:
Park, Sung-Soo. (2013). Wafer structure and epitaxial growth method for growing the same (U.S. Patent No. 8475588). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8475588
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile