The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Feb. 18, 2011
James W. Dawson, Poughkeepsie, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Noam Jungmann, Holon, IL;
Elazar Kachir, Tel Aviv, IL;
Rouwaida N. Kanj, Round Rock, TX (US);
Ehud Nir, Hod Hasharon, IL;
Donald W. Plass, Poughkeepsie, NY (US);
James W. Dawson, Poughkeepsie, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Noam Jungmann, Holon, IL;
Elazar Kachir, Tel Aviv, IL;
Rouwaida N. Kanj, Round Rock, TX (US);
Ehud Nir, Hod Hasharon, IL;
Donald W. Plass, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Systems and methods for determining optimal memory device precharge voltages are provided herein. In addition, systems and methods for providing localized sense amplification and circuit assist circuitry are described herein. Embodiments provide for determining precharge multipliers that may be used to determine the optimal precharge voltage based on a precharge source voltage. According to embodiments, the precharge source voltage may be Vdd or Vcs. Optimizing the precharge voltage maximizes memory device performance and functional characteristics, including, but not limited to, stability, efficiency, power, writability, and reliability.