The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Apr. 15, 2010
Applicants:
Katsumi Ishikawa, Hitachinaka, JP;
Kazutoshi Ogawa, Hitachi, JP;
Masahiro Nagasu, Hitachinaka, JP;
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/60 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.