Substrate processing apparatus and method of manufacturing semiconductor device

Abstract

A processing speed may be easily controlled over the wide range within the impedance variation range. A substrate processing apparatus includes: a processing chamber configured to process a substrate; a substrate support unit configured to support the substrate in the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber; a plasma generation electrode configured to convert the processing gas supplied into the processing chamber to be in a plasma state; a radio frequency power source configured to apply a radio frequency power to the plasma generation electrode; a variable impedance electrode installed at the substrate support unit and configured to control an electric potential of the substrate; a variable impedance mechanism connected to the variable impedance electrode and configured to vary an impedance according to a reciprocal of a peak-to-peak voltage of the plasma generation electrode; an exhaust unit configured to exhaust an atmosphere in the processing chamber; and a controller configured to control at least the variable impedance mechanism.